60-GHz SOI CMOS traveling-wave amplifier with NF below 3.8 dB from 0.1 to 40 GHz-Reference-Cited by-同舟云学术

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60-GHz SOI CMOS traveling-wave amplifier with NF below 3.8 dB from 0.1 to 40 GHz

Published:2005-02 Issue:2 Volume:40 Page:553-558
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Ellinger F.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx5/4/30218/01388647.pdf?arnumber=1388647

Cited by 39 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A DC to 70GHz Distributed Low Noise and Medium Power Amplifier;2023 International Conference on Microwave and Millimeter Wave Technology (ICMMT);2023-05-14

2. Design of a 2-18GHz ultra-wideband MMIC low noise amplifier;IEICE Electronics Express;2022-12-10

3. Integrated Wideband Millimeter-Wave Bias-Tee – Application to Distributed Amplifier Biasing;2021 19th IEEE International New Circuits and Systems Conference (NEWCAS);2021-06-13

4. Performance Comparison of Broadband Traveling Wave Amplifiers in 130-nm SiGe:C SG13G2 and SG13G3 BiCMOS Technologies;IEEE Microwave and Wireless Components Letters;2021-06

5. A Cascaded Multi-Drive Stacked-SOI Distributed Power Amplifier With 23.5 dBm Peak Output Power and Over 4.5-THz GBW;IEEE Transactions on Microwave Theory and Techniques;2020-07

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