Output Power Change Analysis at Temperature Variation in Case of Synchronous Bi-directional DC/DC Converter Using Wide Band Gap Devices
Author:
Affiliation:
1. Czech Technical University,Czech Republic
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10221213/10220948/10221526.pdf?arnumber=10221526
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1. STMicroelectronics;N-channel 800 V 0 07 ? typ 46 A MDmesh™K5 Power MOSFET in a TO-247 package,2015
2. Silicon Carbide Power Transistors: A New Era in Power Electronics Is Initiated
3. STMicroelectronics;Automotive-grade silicon carbide Power MOSFET 1200 V 9 3 m? typ 170 A in a STPAK package,2022
4. Latest developments in Silicon Carbide MOSFETs: Advantages and benefits vs. application
5. A Comparison of Silicon and Silicon Carbide MOSFET Switching Characteristics
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