Physics of breakdown in InAlAs/n/sup +/-InGaAs heterostructure field-effect transistors
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx1/16/7923/00337438.pdf?arnumber=337438
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3. Impact of Gate-Aperture Overlap on the Channel-Pinch Off in InGaAs/InGaN-Based Bonded Aperture Vertical Electron Transistor;IEEE Electron Device Letters;2013-12
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