Channel backscattering characteristics of uniaxially strained nanoscale CMOSFETs-Reference-Cited by-同舟云学术

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Channel backscattering characteristics of uniaxially strained nanoscale CMOSFETs

Published:2005-09 Issue:9 Volume:26 Page:676-678
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Hong-Nien Lin ,Hung-Wei Chen ,Chih-Hsin Ko ,Chung-Hu Ge ,Horng-Chih Lin ,Tiao-Yuan Huang ,Wen-Chin Lee

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/32196/01498996.pdf?arnumber=1498996

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. One-flux theory of saturated drain current in nanoscale transistors;Solid-State Electronics;2012-12

2. Experimental Investigation of Quasi-Ballistic Carrier Transport Characteristics in 10-nm Scale MOSFETs;IEEE Transactions on Nanotechnology;2011-09

3. Criticisms on and comparison of experimental channel backscattering extraction methods;Microelectronic Engineering;2011-01

4. Barrier Lowering and Backscattering Extraction in Short-Channel MOSFETs;IEEE Transactions on Electron Devices;2010-09

5. Carrier transport in strained p-channel field-effect transistors with diamondlike carbon liner stressor;Applied Physics Letters;2010-03

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