A D-band 20.4 dBm OP1dB Transformer-Based Power Amplifier With 23.6% PAE In A 250-nm InP HBT Technology
Author:
Affiliation:
1. KU Leuven,MICAS,Belgium
2. imec,Belgium
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10186107/10186112/10186140.pdf?arnumber=10186140
Reference8 articles.
1. A 110-to-130 GHz SiGe BiCMOS Doherty Power Amplifier With a Slotline-Based Power Combiner
2. DC Boosting Effect of Active Bias Circuits and Its Optimization for Class-AB InGaP–GaAs HBT Power Amplifiers
3. High Efficiency D-Band Multiway Power Combined Amplifiers With 17.5–19-dBm Psat and 14.2–12.1% Peak PAE in 45-nm CMOS RFSOI
4. 24.7 A 15dBm 12.8%-PAE Compact D-Band Power Amplifier with Two-Way Power Combining in 16nm FinFET CMOS
5. The Effects of Scaling and Bias Configuration on Operating-Voltage Constraints in SiGe HBTs for Mixed-Signal Circuits
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