Recent results and future challenges for the NIST charged-capacitor experiment
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Instrumentation
Link
http://xplorestaging.ieee.org/ielx1/19/12386/00571835.pdf?arnumber=571835
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Single electron pumping in InAs nanowire double quantum dots;Applied Physics Letters;2007-07-30
2. Electrical metrology with single electrons;Measurement Science and Technology;2003-07-16
3. Excellent charge offset stability in a Si-based single-electron tunneling transistor;Applied Physics Letters;2001-11-05
4. Dynamic input capacitance of single-electron transistors and the effect on charge-sensitive electrometers;Journal of Applied Physics;2000-06-15
5. TOWARDS SINGLE-ELECTRON METROLOGY;International Journal of Modern Physics B;1999-09-10
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