3nm Gate-All-Around (GAA) Design-Technology Co-Optimization (DTCO) for succeeding PPA by Technology
Author:
Affiliation:
1. Samsung Electronics,Hwaseong,Korea
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9772767/9772730/09772784.pdf?arnumber=9772784
Reference11 articles.
1. Design Technology Co-Optimization in Technology Definition for 22nm and Beyond;northrop;Symp VLSI Technol Dig Tech Papers,0
2. The past present and future of design-technology co-optimization
3. 24.3 A 3nm Gate-All-Around SRAM Featuring an Adaptive Dual-BL and an Adaptive Cell-Power Assist Circuit
4. Pin Accessibility-Driven cell Layout Design and Placement Optimization;seo;ACM/EDAC/IEEE 54th Design Automation Conference (DAC),0
5. 15.1 A 5nm 135Mb SRAM in EUV and High-Mobility-Channel FinFET Technology with Metal Coupling and Charge-Sharing Write-Assist Circuitry Schemes for High-Density and Low-VMIN Applications
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1. In-Depth DTCO Analysis on Scaling Gate-All-Around Nanosheets/Nanowires for 20 Å Node and Beyond Technologies;IEEE Transactions on Electron Devices;2024-08
2. 3.9 A 1.2V High-Voltage-Tolerant Bootstrapped Analog Sampler in 12-bit SAR ADC Using 3nm GAA’s 0.7V Thin-Gate-Oxide Transistor;2024 IEEE International Solid-State Circuits Conference (ISSCC);2024-02-18
3. Redefining Innovation: A Journey forward in New Dimension Era;2023 International Electron Devices Meeting (IEDM);2023-12-09
4. Multi-Source Transfer Learning for Design Technology Co-Optimization;2023 IEEE/ACM International Symposium on Low Power Electronics and Design (ISLPED);2023-08-07
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