Performance Analysis of Normally-Off $\beta-(\text{AlxGa} 1-\mathrm{x})_{2} \mathrm{O}_{3} / \text{Ga}_{2} \mathrm{O}_{3}$ High Electron Mobility Transistor (HEMT) With p-GaN Gate and Addon AlGa<sub>2</sub>O<sub>3</sub> Layer-Reference-Cited by-同舟云学术

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Performance Analysis of Normally-Off $\beta-(\text{AlxGa} 1-\mathrm{x})_{2} \mathrm{O}_{3} / \text{Ga}_{2} \mathrm{O}_{3}$ High Electron Mobility Transistor (HEMT) With p-GaN Gate and Addon AlGa₂O₃ Layer

Published:2023-11-23 Issue: Volume: Page:779-784
ISSN:
Container-title:2023 3rd International Conference on Advancement in Electronics & Communication Engineering (AECE)
language:
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Author:

Mukherjee Praskandan¹,Kashyap Nitesh¹,Ranjan Ravi¹

Affiliation:

1. NIT Jalandhar, DR. B.R.Ambedkar National Institute of Technology, Jalandhar,dept. of Electronics & Communication Engineering,Jalndhar,India

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10428120/10428096/10428298.pdf?arnumber=10428298

Reference35 articles.

1. State-of-the-art technologies of gallium oxide power devices

2. Realizing High-Performance β-Ga₂O₃ MOSFET by Using Variation of Lateral Doping: A TCAD Study

3. Evaluation of Low-Temperature Saturation Velocity in $\beta$ -(AlxGa1–x)2O3/Ga2O3 Modulation-Doped Field-Effect Transistors

4. Low-pressure CVD-grown β-Ga2O3bevel-field-plated Schottky barrier diodes

5. Ultra-wide bandgap semiconductor Ga2O3 power diodes

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