Comparative Assessment of GST and GeTe Materials for Application to Embedded Phase-Change Memory Devices-Reference-Cited by-同舟云学术

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Comparative Assessment of GST and GeTe Materials for Application to Embedded Phase-Change Memory Devices

Published:2009-05 Issue: Volume: Page:
ISSN:
Container-title:2009 IEEE International Memory Workshop
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Author:

Fantini A.,Perniola L.,Armand M.,Nodin J. F.,Sousa V.,Persico A.,Cluzel J.,Jahan C.,Maitrejean S.,Lhostis S.,Roule A.,Dressler C.,Reimbold G.,De Salvo B.,Mazoyer P.,Bensahel D.,Boulanger F.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5090563/5090564/05090585.pdf?arnumber=5090585

Cited by 44 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thickness dependence and crystallization properties of amorphous GeTe thin films on silicon dioxide;Physica Scripta;2024-09-12

2. Interface-controlled growth-dominated crystallization enables ultralow resistance drift in GeTe/Sb2Te3 phase-change heterostructure thin films;Journal of Alloys and Compounds;2024-08

3. Exploring the potential of GeTe for the application in Thermophotovoltaic (TPV) cell;Physica Scripta;2023-11-14

4. Indirect Electrical-Control Through Heating of a GeTe Phase Change Switch and Its Application to Reflexion Type Phase Shifting;2023 International Microwave and Antenna Symposium (IMAS);2023-02-07

5. Sub-300 Millivolt Operation in Nonvolatile 300 nm x 100 nm Phase Change Nanoelectromechanical Switch;2023 IEEE 36th International Conference on Micro Electro Mechanical Systems (MEMS);2023-01-15

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