$W$-Band GaN T/R Single Chip With 1-W Output Power and 6.4-dB Noise Figure for AESA Applications-Reference-Cited by-同舟云学术

$W$-Band GaN T/R Single Chip With 1-W Output Power and 6.4-dB Noise Figure for AESA Applications

Published:2024 Issue: Volume: Page:1-14
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Wang Yutong¹,Lin Feng¹^ORCID,Sun Houjun¹^ORCID,Wu Hongjiang²,Xu Chunliang³,Fang Yuan²,Liu Huidong³,Li Yuanpeng³,Cui Lu³,Li Ming³,Wu Yonghui³,Zeng Zhi³

Affiliation:

1. School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing, China

2. CETC Academy of Industrial Foundation, Shijiazhuang, China

3. Microwave Applications Research Institute, CETC Academy of Industrial Foundation, Shijiazhuang, China

Funder

Beijing Natural Science Foundation

National Key Research and Development Program of China

Natural Science Foundation of Shandong Province

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx7/22/4359079/10244233.pdf?arnumber=10244233

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Full W-Band InP LNA With Enhanced Gain Flatness;IEEE Transactions on Circuits and Systems II: Express Briefs;2024-09

2. W-Band Asymmetric CMOS Switch Using Inductive Matching Technique;IEEE Microwave and Wireless Technology Letters;2024-08

3. A 24–30 GHz GaN Front-End MMIC with Coupled-Resonator based Transmit/Receive Switch for 5G Millimeter-Wave Applications;2024 IEEE Radio Frequency Integrated Circuits Symposium (RFIC);2024-06-16

4. InAlN/GaN MISHEMTs With 120 nm T-Shape Recessed Gates on Silicon With Excellent mm-Wave Noise Performance;IEEE Microwave and Wireless Technology Letters;2024-04

5. A W-Band GaN MMIC Single-Chip T/R Front End;IEEE Transactions on Microwave Theory and Techniques;2024