Funder
National Natural Science Foundation of China
National Key Research and Development Program of China
Sichuan Science and Technology Program
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Radiation
Cited by
5 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. On large-signal modeling of GaN HEMTs: past, development and future;Chip;2023-09
2. An Improved Millimeter Wave MOSFET Model Based on BSIM4;2022 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP);2022-11-27
3. An Extensive Large Signal Equivalent Circuit Model of GaAs-PIN Photodiode;IEEE Electron Device Letters;2022-08
4. Hexahedron-Based Control Volume Finite Element Method for Fully Coupled Nonlinear Drift-Diffusion Transport Equations in Semiconductor Devices;IEEE Transactions on Microwave Theory and Techniques;2022-06
5. An Improved Drain-Current Model for FinFETs;2020 IEEE MTT-S International Conference on Numerical Electromagnetic and Multiphysics Modeling and Optimization (NEMO);2020-12-07