Low V<inf>f</inf> and highly reliable 16 kV ultrahigh voltage SiC flip-type n-channel implantation and epitaxial IGBT-Reference-Cited by-同舟云学术

Low Vf and highly reliable 16 kV ultrahigh voltage SiC flip-type n-channel implantation and epitaxial IGBT

Published:2013-12 Issue: Volume: Page:
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Container-title:2013 IEEE International Electron Devices Meeting
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Author:

Yonezawa Yoshiyuki,Mizushima Tomonori,Takenaka Kensuke,Fujisawa Hiroyuki,Kato Tomohisa,Harada Shinsuke,Tanaka Yasunori,Okamoto Mitsuo,Sometani Mitsuru,Okamoto Dai,Kumagai Naoki,Matsunaga Shinichiro,Deguchi Tadayoshi,Arai Manabu,Hatakeyama Tetsuo,Makifuchi Youichi,Araoka Tsuyoshi,Oose Naoyuki,Tsutsumi Takashi,Yoshikawa Mitsuru,Tatera Katsumi,Harashima Masayuki,Sano Yukio,Morisaki Eisuke,Takei Manabu,Miyajima Masaaki,Kimura Hiroshi,Otsuki Akihiro,Fukuda Kenji,Okumura Hajime,Kimoto Tsunenobu

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6709840/6724533/06724576.pdf?arnumber=6724576

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