GaN-on-GaN p-n power diodes with 3.48 kV and 0.95 mΩ-cm2: A record high figure-of-merit of 12.8 GW/cm2-Reference-Cited by-同舟云学术

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GaN-on-GaN p-n power diodes with 3.48 kV and 0.95 mΩ-cm2: A record high figure-of-merit of 12.8 GW/cm2

Published:2015-12 Issue: Volume: Page:
ISSN:
Container-title:2015 IEEE International Electron Devices Meeting (IEDM)
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Author:

Nomoto Kazuki,Hu Z.,Song B.,Zhu M.,Qi M.,Yan R.,Protasenko V.,Imhoff E.,Kuo J.,Kaneda N.,Mishima T.,Nakamura T.,Jena D.,Xing Huili Grace

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7402013/7409598/07409665.pdf?arnumber=7409665

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Formation of GaN mesas with reverse-tapered edge structures on a lattice-matched AlInN layer for a positive beveled edge termination;Applied Physics Express;2024-07-31

2. From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices;Journal of Physics: Materials;2024-03-08

3. 1 kV Self-Aligned Vertical GaN Superjunction Diode;IEEE Electron Device Letters;2024-01

4. Vertical GaN Schottky Barrier Diode With Hybrid P-NiO Junction Termination Extension;IEEE Journal of the Electron Devices Society;2024

5. Planar Implantation Edge Termination for Vertical GaN Power Devices;2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA);2023-12-04

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