High frequency high breakdown voltage GaN transistors-Reference-Cited by-同舟云学术

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High frequency high breakdown voltage GaN transistors

Published:2015-12 Issue: Volume: Page:
ISSN:
Container-title:2015 IEEE International Electron Devices Meeting (IEDM)
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Author:

Medjdoub F.,Herbecq N.,Linge A.,Zegaoui M.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7402013/7409598/07409660.pdf?arnumber=7409660

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of Transverse Geometry of Sidewall Gates on Characteristics of AlGaN/GaN Fin-HEMTs;IEEE Transactions on Electron Devices;2024-03

2. Investigation of the Influence of the Buffer Layer Design in a GaN HEMT Transistor on the Breakdown Characteristics;Russian Microelectronics;2023-12

3. Method to Study Dynamic Depletion Behaviors in High-Voltage ($BV=1.4\ \text{kV}$) p-GaN Gate HEMT on Sapphire Substrate;2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2023-05-28

4. Electron accumulation and distribution at interfaces of hexagonal Sc_xAl_1−xN/GaN- and Sc_xAl_1−xN/InN-heterostructures;Journal of Applied Physics;2022-06-28

5. Polarization induced interface and electron sheet charges of pseudomorphic ScAlN/GaN, GaAlN/GaN, InAlN/GaN, and InAlN/InN heterostructures;Journal of Applied Physics;2021-05-28

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