Comparative Analysis of Leakage Power in 18nm 7T and 8T SRAM cell Implemented with SVL Technique
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Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9151448/9159959/09160028.pdf?arnumber=9160028
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Analysis and Implementation of Graphene Nanoribbon Field Effect Transistor based SRAM Cell;2023 International Conference on Recent Advances in Science and Engineering Technology (ICRASET);2023-11-23
2. Dual Power Gating 8-Transistor SRAM Design For Low Power Applications;2023 International Conference on System Science and Engineering (ICSSE);2023-07-27
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