Efficient power Schottky rectifiers of 4H-SiC-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Efficient power Schottky rectifiers of 4H-SiC

Published: Issue: Volume: Page:
ISSN:
Container-title:Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95
language:
Short-container-title:

Author:

Itoh A.,Kimoto T.,Matsunami H.

Publisher

Inst. Electr. Eng. Japan

Link

http://xplorestaging.ieee.org/ielx3/3944/11420/00515017.pdf?arnumber=515017

Cited by 33 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of the contact area on the electrical characteristics of the Ti/6H–SiC (n) Schottky diode;Micro and Nanostructures;2023-01

2. A method for characterizing near-interface traps in SiC metal–oxide–semiconductor capacitors from conductance–temperature spectroscopy measurements;Journal of Applied Physics;2021-02-07

3. 2.3-kV, 5-A 4H-SiC Ti and Ni JBS Rectifiers manufactured in Commercial Foundry: Impact of Implant Lateral Straggle;2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia);2020-09-23

4. Near-Interface Trap Model for the Low Temperature Conductance Signal in SiC MOS Capacitors With Nitrided Gate Oxides;IEEE Transactions on Electron Devices;2020-09

5. Fundamental research on semiconductor SiC and its applications to power electronics;Proceedings of the Japan Academy, Series B;2020-07-31

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP