A novel soft and fast recovery diode (SFD) with thin p-layer formed by Al-Si electrode
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx2/542/3909/00146079.pdf?arnumber=146079
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. On the Electron Extraction Mechanism in Punch-through NPN Fast Recovery Diodes;2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2023-05-28
2. Control of pn-junction turn-on voltage in 4H-SiC merged PiN Schottky diode;Applied Physics Letters;2017-04-03
3. Low Reverse Recovery Charge 30 V Power MOSFET With Double Epi Structure for DC–DC Converters;IEEE Transactions on Electron Devices;2016-03
4. Ultrafast lateral 600V silicon SOI PiN diode with geometric traps for preventing waveform oscillation;Solid-State Electronics;2015-02
5. 1200 V Schottky controlled injection diode: An advanced anode concept for low injection efficiency;Japanese Journal of Applied Physics;2014-01-01
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