Dislocation pinning in GaAs by the deliberate introduction of impurities-Reference-Cited by-同舟云学术

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Dislocation pinning in GaAs by the deliberate introduction of impurities

Published:1975-07 Issue:7 Volume:11 Page:562-568
ISSN:0018-9197
Container-title:IEEE Journal of Quantum Electronics
language:
Short-container-title:IEEE J. Quantum Electron.

Author:

Kirkby P.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics

Link

http://xplorestaging.ieee.org/ielx5/3/7802393/01068634.pdf?arnumber=1068634

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