A G-Band Wideband Bidirectional Transceiver Front-End in 40-nm CMOS-Reference-Cited by-同舟云学术

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A G-Band Wideband Bidirectional Transceiver Front-End in 40-nm CMOS

Published:2019-05 Issue:5 Volume:66 Page:798-802
ISSN:1549-7747
Container-title:IEEE Transactions on Circuits and Systems II: Express Briefs
language:
Short-container-title:IEEE Trans. Circuits Syst. II

Author:

Liu Yibo^ORCID,Ma Taikun,Guan Pingda,Mao Luhong,Chi Baoyong^ORCID

Funder

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/8920/8703186/08678458.pdf?arnumber=8678458

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design of K-Band Power Amplifier with 180-Degree Phase- Shift Function Using Low-Power CMOS Process;Applied Sciences;2023-02-15

2. Low Insertion Loss, Reflective-Load Switches Operating in D-Band and G-Band;IEEE Transactions on Microwave Theory and Techniques;2023-01

3. High PAE CMOS Power Amplifier With 44.4% FBW Using Superimposed Dual-Band Configuration and DGS Inductors;IEEE Microwave and Wireless Components Letters;2022-12

4. A 180-GHz Low-Noise Amplifier With Recursive Z-Embedding Technique in 40-nm CMOS;IEEE Transactions on Circuits and Systems II: Express Briefs;2022-12

5. A 250-GHz Differential SiGe Amplifier With 21.5-dB Gain for Sub-THz Transmitters;IEEE Transactions on Terahertz Science and Technology;2020-11

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