A Compact Low-Loss High-Selectivity Excellent-Isolation FBAR Duplexer Integrated Chip for LTE Band-3 Industrial Applications

Author:

Wu Yongle1ORCID,Wu Haopeng1ORCID,Wang Weimin1ORCID,Yang Yuhao1,Lai Zhiguo2ORCID,Yang Qinghua2

Affiliation:

1. School of Electronic Engineering, Beijing Key Laboratory of Work Safety Intelligent Monitoring, Beijing University of Posts and Telecommunications, Beijing, China

2. Design Department, HunterSun Electronics Company Ltd., Suzhou, China

Funder

Beijing Natural Science Foundation

National Natural Science Foundations of China

National Special Support Program for High-Level Personnel Recruitment

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Design of Hybrid Bandpass Filter Chips with High Selectivity and Wideband Using IPD and FBAR Technology;International Journal of RF and Microwave Computer-Aided Engineering;2024-05-25

2. Design of an N3-band FBAR Filter Chip for Mobile Communications;2024 Photonics & Electromagnetics Research Symposium (PIERS);2024-04-21

3. Study on the impact of the resonant cavity and lateral acoustic edge reflector for AlSc0.095N-based S0 mode Lamb-wave resonators;Microelectronics Journal;2024-03

4. Design of High Order HTS Duplexer Based on SIR Structure;IEEE Transactions on Applied Superconductivity;2023-06

5. Design of FBAR/IPD/MMIC chips for 5G applications;2023 IEEE MTT-S International Wireless Symposium (IWS);2023-05-14

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