Quantitative Prediction of Ion-Induced Single-Event Transients in an Operational Amplifier Using a Quasi-Bessel Beam Pulsed-Laser Approach
Author:
Affiliation:
1. Jacobs Inc, Herndon, VA, USA
2. U.S. Naval Research Laboratory, Washington, DC, USA
3. NASA Jet Propulsion Laboratory, Pasadena, CA, USA
Funder
DTRA Radiation Hardened Microelectronics Program
DTRA Basic Research Combating Weapons of Mass Destruction Program
Office of Naval Research
Defense Advanced Research Projects Agency
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics
Link
http://xplorestaging.ieee.org/ielx7/23/10103954/09999719.pdf?arnumber=9999719
Reference40 articles.
1. Pulsed-laser testing methodology for single event transients in linear devices
2. The role of parasitic elements in the single-event transient response of linear circuits
3. Evaluation of sensitivity parameters for single event latchup effect in CMOS LSI ICs by pulsed laser backside irradiation tests
4. Study and Modeling of the Impact of TID on the ATREE Response in LM124 Operational Amplifier
5. Optimizing Optical Parameters to Facilitate Correlation of Laser- and Heavy-Ion-Induced Single-Event Transients in SiGe HBTs
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