Compact Modeling of Body Effect for “Extrinsic” MOSFETs-Reference-Cited by-同舟云学术

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Compact Modeling of Body Effect for “Extrinsic” MOSFETs

Published:2022-06-09 Issue: Volume: Page:
ISSN:
Container-title:2022 Moscow Workshop on Electronic and Networking Technologies (MWENT)
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Author:

Turin Valentin¹,Shcherbina Maxim¹,Shkarlat Roman²,Kshensky Oleg²,Poyarkov Vyacheslav²,Zebrev Gennady³,Kokin Sergey⁴,Makarov Sergey⁴,Rakhmatov Badurdin⁵

Affiliation:

1. Orel State University named after I.S. Turgenev,Dept. of Experimental and Theoretical Physics,Orel,Russia

2. JSC “Bolkhov Plant of Semiconductor Devices”,Bolkhov,Orel region,Russia

3. National Research Nuclear University “MEPhI”,Dept. of Micro- and Nanoelectronics,Moscow,Russia

4. Integrated Solutions LLC,Zelenograd,Moscow,Russia

5. Tajik National University,Dushanbe,Tajikistan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9802078/9801892/09802241.pdf?arnumber=9802241

Reference23 articles.

1. Accounting for the body effect in the compact modeling of an “extrinsic” MOSFET drain current in the linear and saturation regimes

2. Device Modeling for Analog and RF CMOS Circuit Design

3. Fundamentals of Modern VLSI Devices

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Accounting for Carrier Mobility Reduction due to the Normal Field in the Saturation Current Modeling of Extrinsic MOSFETs;Russian Microelectronics;2023-12

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