Amorphous In-Ga-Mg-O Thin Films Formed by RF Magnetron Sputtering: Optical, Electrical Properties and Thin-Film-Transistor Characteristics-Reference-Cited by-同舟云学术

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Amorphous In-Ga-Mg-O Thin Films Formed by RF Magnetron Sputtering: Optical, Electrical Properties and Thin-Film-Transistor Characteristics

Published:2022 Issue: Volume:3 Page:149-152
ISSN:2644-1292
Container-title:IEEE Open Journal of Nanotechnology
language:
Short-container-title:IEEE Open J. Nanotechnol.

Author:

Yabuta Hisato¹^ORCID,Itagaki Naho¹^ORCID,Ekino Toshikazu²,Shigesato Yuzo³

Affiliation:

1. Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka, Japan

2. Graduate School of Advanced Science and Engineering, Hiroshima University, Higashi-Hiroshima, Japan

3. Graduate School of Science and Engineering, Aoyama Gakuin University, Sagamihara, Japan

Funder

CSTI-SIP

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Materials Chemistry,Electrical and Electronic Engineering,Computer Science Applications,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/8782713/9680797/09954130.pdf?arnumber=9954130

Reference12 articles.

1. Amorphous Oxide Semiconductor TFTs for BEOL Transistor Applications

2. Transparent Amorphous Oxide Semiconductors

3. Optical Properties of Amorphous Semiconductors

4. New Transparent Conductive Oxides withYbFe2O4Structure

5. Microscopic structure and electrical transport property of sputter-deposited amorphous indium-gallium-zinc oxide semiconductor films

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