Selective Barrier for Cu Interconnect Extension in 3nm Node and Beyond-Reference-Cited by-同舟云学术

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Selective Barrier for Cu Interconnect Extension in 3nm Node and Beyond

Published:2021-07-06 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE International Interconnect Technology Conference (IITC)
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Author:

You Shi,Ren He,Naik Mehul,Chen Lu,Chen Feng,Cervantes Carmen Leal,Xie Xiangjing,Kashefizadeh Keyvan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9537309/9537310/09537559.pdf?arnumber=9537559

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optimization of Area Selective Barrier on Different Metal Interconnects;2024 35th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC);2024-05-13

2. CMOS Scaling for the 5 nm Node and Beyond: Device, Process and Technology;Nanomaterials;2024-05-09

3. The Formation of Ru/ZnO Multifunctional Bilayer through Area Selective Atomic Layer Deposition for Advanced Cu Metallization;2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM);2023-05

4. Anisotropic Resistivity Size Effect in Epitaxial Mo(001) and Mo(011) Layers;Nanomaterials;2023-03-07

5. NS3K: A 3-nm Nanosheet FET Standard Cell Library Development and its Impact;IEEE Transactions on Very Large Scale Integration (VLSI) Systems;2023-02

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