Analysis of Resistive Switching Mechanism in Hexagonal Boron Nitride 2D Material Based Memristive Device
Author:
Affiliation:
1. Indian Institute of Technology Patna,Department of Electrical Engineering
Funder
Science and Engineering Research Board
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10231127/10231154/10231194.pdf?arnumber=10231194
Reference21 articles.
1. Understanding Interlayer Coupling in TMD-hBN Heterostructure by Raman Spectroscopy
2. Synthesis and characterization of nanocrystaline hexagonal boron nitride powders: XRD and luminescence properties
3. Performance Analysis of Forming Free Switching Dynamics of e-Beam Evaporated SnOx Based Resistive Switching Device
4. Preparation of few layers hexagonal boron nitride nanosheets via high-pressure homogenization
5. Solution-Processed Layered Hexagonal Boron Nitride Dielectrics: A Route toward Fabrication of High Performance Flexible Devices
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