A Novel Non-Voltatile Magnetic Majority Gate with Voltage-Gated Spin-Orbit Torque Magnetic Tunnel Junction Cascaded in Series for Low Power and High Reliability-Reference-Cited by-同舟云学术

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A Novel Non-Voltatile Magnetic Majority Gate with Voltage-Gated Spin-Orbit Torque Magnetic Tunnel Junction Cascaded in Series for Low Power and High Reliability

Published:2023-07-02 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE 23rd International Conference on Nanotechnology (NANO)
language:
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Author:

Xia Yining¹,Zhang Kaili¹,Zeng Lang¹,Zhang Yue¹,Zhao Weisheng¹,Zhang Deming¹

Affiliation:

1. School of Integrated Circuit Science and Engineering, Fert Beijing Institute, Beihang University,MIIT Key Laboratory of Spintronics,Beijing,China,100191

Funder

Beijing Natural Science Foundation

National Science Foundation of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10231127/10231154/10231242.pdf?arnumber=10231242

Reference16 articles.

1. Majority Logic Formulations for Parallel Adder Designs at Reduced Delay and Circuit Complexity

2. Majority-Inverter Graph: A New Paradigm for Logic Optimization

3. Design of Magnetic Non-Volatile TCAM With Priority-Decision in Memory Technology for High Speed, Low Power, and High Reliability

4. A Novel MTJ-Based Non-Volatile Ternary Content-Addressable Memory for High-Speed, Low-Power, and High-Reliable Search Operation

5. A Novel In-Memory Wallace Tree Multiplier Architecture Using Majority Logic

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