Characterizing Semiconductor Devices for All-Electric Aircraft-Reference-Cited by-同舟云学术

Characterizing Semiconductor Devices for All-Electric Aircraft

Published:2023 Issue: Volume:11 Page:73490-73504
ISSN:2169-3536
Container-title:IEEE Access
language:
Short-container-title:IEEE Access

Author:

Elwakeel Abdelrahman¹^ORCID,Mcneill Neville¹^ORCID,Alzola Rafael Peña¹^ORCID,Surapaneni Ravi Kiran²,Galla Gowtham²,Ybanez Ludovic²,Zhang Min¹^ORCID,Yuan Weijia¹^ORCID

Affiliation:

1. Department of Electronic and Electrical Engineering, University of Strathclyde, Glasgow, U.K

2. Airbus UpNext, Toulouse, France

Funder

Airbus UpNext

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

General Engineering,General Materials Science,General Computer Science,Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/6287639/10005208/10131949.pdf?arnumber=10131949

Reference23 articles.

1. Measurement and modelling of power electronic devices at cryogenic temperatures

2. Cryogenic operation of asymmetric n-channel IGBTs

3. Enhanced power density and expanded line-up of the 7th gen industrial IGBT modules utilizing the improved thermal conductivity of the highly reliable SLC-technology;radke;Bodo’s Power Syst,2016

4. Characterization of wide bandgap semiconductor devices for cryogenically-cooled power electronics in aircraft applications;zhang;Proc AIAA/IEEE Electr Aircr Technol Symp (EATS),2018

5. Cryogenic Static and Dynamic Characterizations of 650 V Field Stop Trench Si IGBT

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Physics-based Compact Model of SiC MOSFET for Cryogenic Performance Prediction;2023 IEEE Energy Conversion Congress and Exposition (ECCE);2023-10-29

2. Low Temperature Loss-Analysis of SiC MOSFETs for Integrated Motor Drive Applications;2023 IEEE Energy Conversion Congress and Exposition (ECCE);2023-10-29