Vertical Tunneling Field-Effect Transistor With Germanium Source and T-Shaped Silicon Channel for Switching and Biosensing Applications: A Simulation Study-Reference-Cited by-同舟云学术

Vertical Tunneling Field-Effect Transistor With Germanium Source and T-Shaped Silicon Channel for Switching and Biosensing Applications: A Simulation Study

Published:2022-09 Issue:9 Volume:69 Page:5170-5176
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Chahardah Cherik Iman¹^ORCID,Mohammadi Saeed¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, Semnan University, Semnan, Iran

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9864631/09831110.pdf?arnumber=9831110

Reference32 articles.

1. Design and Performance Assessment of Dielectrically Modulated Nanotube TFET Biosensor

2. Design and Analysis of Dual-Metal-Gate Double-Cavity Charge-Plasma-TFET as a Label Free Biosensor

3. Performance Assessment of A Novel Vertical Dielectrically Modulated TFET-Based Biosensor

4. Vertical-Structured Electron-Hole Bilayer Tunnel Field-Effect Transistor for Extremely Low-Power Operation With High Scalability

5. Vertical Si-Nanowire $n$-Type Tunneling FETs With Low Subthreshold Swing ($\leq \hbox{50}\ \hbox{mV/decade}$ ) at Room Temperature

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