Read Disturbances in Cross-Point Phase-Change Memory Arrays—Part I: Physical Modeling With Phase-Change Dynamics-Reference-Cited by-同舟云学术

Read Disturbances in Cross-Point Phase-Change Memory Arrays—Part I: Physical Modeling With Phase-Change Dynamics

Published:2023-02 Issue:2 Volume:70 Page:514-520
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Kim Donguk¹,Jang Jun Tae¹^ORCID,Kim Changwook¹^ORCID,Kim Hyun Wook²,Hong Eunryeong²^ORCID,Ban Sanghyun³^ORCID,Shin Minchul³,Lee Hanwool³,Lee Hyung Dong³,Mo Hyun-Sun¹,Woo Jiyong²^ORCID,Kim Dae Hwan¹^ORCID

Affiliation:

1. School of Electrical Engineering, Kookmin University, Seoul, South Korea

2. School of Electronic and Electrical Engineering, Kyungpook National University, Daegu, South Korea

3. SK Hynix, Icheon-si, South Korea

Funder

SK Hynix

National Research Foundation (NRF), South Korea, funded by the Korean Government

Institute of Information and Communications Technology Planning and Evaluation (IITP) funded by the Korea Government

NRF grant funded by the Korea Government

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10025571/10003137.pdf?arnumber=10003137

Reference31 articles.

1. Conductive preferential paths of hot carriers in amorphous phase-change materials

2. Evidence of filamentary switching and relaxation mechanisms in GexSe1-xOTS selectors

3. Breakthrough of selector technology for cross-point 25-nm ReRAM

4. Highly-scalable threshold switching select device based on chaclogenide glasses for 3D nanoscaled memory arrays

5. Innovative PCM+OTS device with high sub-threshold non-linearity for non-switching reading operations and higher endurance performance

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