Compact Numerical Modeling of Indirect Time-of-Flight CMOS Image Sensors
Author:
Affiliation:
1. School of Microelectronics, Key Laboratory of Micro-Nano Electronics and System Integration of Xi’an City, Xi’an Jiaotong University, Xi’an, China
2. Southwest Institute of Technical Physics, Chengdu, China
Funder
National Natural Science Foundation of China
Post-Doctoral Research FundingProject of Shaanxi Province
Shaanxi Key Research and Development Plan
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9967813/09950288.pdf?arnumber=9950288
Reference25 articles.
1. A Charge Transfer Model for CMOS Image Sensors
2. Compact Modeling of Charge Transfer in Pinned Photodiodes for CMOS Image Sensors
3. Physical Model of Current-Assisted Photonic Demodulator (CAPD) for Time-of-Flight CMOS Image Sensor
4. $320 \times 240$ Back-Illuminated 10- $\mu \text{m}$ CAPD Pixels for High-Speed Modulation Time-of-Flight CMOS Image Sensor
5. A Time-Resolved Four-Tap Lock-In Pixel CMOS Image Sensor for Real-Time Fluorescence Lifetime Imaging Microscopy
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1. Indirect time-of-flight pixel study: 3D Monte Carlo simulation approach;Physics and Simulation of Optoelectronic Devices XXXII;2024-03-11
2. A Backside-Illuminated 3.5 μm Pixel With 86% Demodulation Contrast at 1.0 V Voltage Swing for Indirect Time-of-Flight Image Sensors;IEEE Transactions on Electron Devices;2023-09
3. Wiggling-Related Error Correction Method for Indirect ToF Imaging Systems;Photonics;2023-02-05
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