Low- and high-energy proton irradiations of standard and oxygenated silicon diodes

Author:

Candelori A.1,Rando R.,Bisello D.,Bacchetta N.,Kaminski A.,Pantano D.,Stavitski I.,Wyss J.

Affiliation:

1. Dipt. di Fisica, Padova Univ., Italy

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Radiation effect on silicon transistors in mixed neutrons–gamma environment;Radiation Physics and Chemistry;2014-10

2. Radiation-hard detectors for very high luminosity colliders;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2006-05

3. Semiconductor materials and detectors for future very high luminosity colliders;IEEE Transactions on Nuclear Science;2005-12

4. Lithium ion irradiation of standard and oxygenated silicon diodes;IEEE Transactions on Nuclear Science;2004-10

5. Lithium ion-induced damage in silicon detectors;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2004-02

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