High-Frequency Characteristics of Photogenerated Carriers in AlGaN/GaN HEMTs
Author:
Affiliation:
1. School of Engineering, Chukyo University,Department of Electrical and Electronic Engineering,Nagoya,Japan
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10322307/10322308/10322443.pdf?arnumber=10322443
Reference16 articles.
1. An overview on recent developments in RF and microwave power H-terminated diamond MESFET technology
2. A review of junction field effect transistors for high-temperature and high-power electronics
3. Deep traps in GaN-based structures as affecting the performance of GaN devices
4. Characterization and analysis of electrical trap related effects on the reliability of AlGaN/GaN HEMTs
5. Threshold Voltage Instability Mechanisms in p-GaN Gate AlGaN/GaN HEMTs
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