A D-Band Joint Radar-Communication CMOS Transceiver-Reference-Cited by-同舟云学术

A D-Band Joint Radar-Communication CMOS Transceiver

Published:2023-02 Issue:2 Volume:58 Page:411-427
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Deng Wei¹^ORCID,Chen Zipeng¹^ORCID,Jia Haikun¹^ORCID,Guan Pingda¹,Ma Taikun¹^ORCID,Yan Angxiao¹^ORCID,Sun Shiyan¹,Huang Xiangrong¹,Chen Guopei¹,Ma Ruichang¹^ORCID,Dong Shengnan¹,Duan Luqiang¹,Wang Zhihua¹^ORCID,Chi Baoyong¹^ORCID

Affiliation:

1. School of Integrated Circuits, BNRist, Tsinghua University, Beijing, China

Funder

National Key Research and Development Program of China

Shenzhen Science and Technology Program

Guangdong International Collaboration Program

Tsinghua-Samsung Joint Research Project

Beijing Innovation Center for Future Chips (ICFC), Tsinghua University

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/4/10027566/09810171.pdf?arnumber=9810171

Reference53 articles.

1. A CMOS Two-Element 170-GHz Fundamental-Frequency Transmitter With Direct RF-8PSK Modulation

2. Analysis and Design of High-Order QAM Direct-Modulation Transmitter for High-Speed Point-to-Point mm-Wave Wireless Links

3. An Eight-Element 140-GHz Wafer-Scale IF Beamforming Phased-Array Receiver With 64-QAM Operation in CMOS RFSOI

4. 300-GHz-Band 120-Gb/s Wireless Front-End Based on InP-HEMT PAs and Mixers

5. 24-40 GHz Gain-Boosted Wideband CMOS Down-Conversion Mixer Employing Body-Effect Control for 5G NR Applications

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