A High Dynamic Range 128 × 120 3-D Stacked CMOS SPAD Image Sensor SoC for Fluorescence Microendoscopy-Reference-Cited by-同舟云学术

A High Dynamic Range 128 × 120 3-D Stacked CMOS SPAD Image Sensor SoC for Fluorescence Microendoscopy

Published:2022-06 Issue:6 Volume:57 Page:1649-1660
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Erdogan Ahmet T.¹^ORCID,Al Abbas Tarek¹^ORCID,Finlayson Neil¹,Hopkinson Charlotte¹^ORCID,Gyongy Istvan¹^ORCID,Almer Oscar¹,Dutton Neale A. W.²^ORCID,Henderson Robert K.¹^ORCID

Affiliation:

1. School of Engineering, Institute for Integrated Micro and Nano Systems, The University of Edinburgh, Edinburgh, U.K.

2. Imaging Division, STMicroelectronics, Edinburgh, U.K.

Funder

STMicroelectronics through the PROTEUS Project

Engineering and Physical Engineering Research Council

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/4/9781662/09723499.pdf?arnumber=9723499

Reference41 articles.

1. Dual layer 3D-stacked high dynamic range SPAD pixel;al abbas;Proc Int Image Sensors Workshop (IISW),2019

2. 185 MHz count rate 139 dB dynamic range single-photon avalanche diode with active quenching circuit in 130 nm CMOS technology;eisele;Proc Int Image Sensors Workshop (IISW),2011

3. A 256×256 40 nm/90 nm CMOS 3D-stacked 120 dB dynamic-range reconfigurable time-resolved SPAD imager;henderson;IEEE ISSCC Dig Tech Papers,2019

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