Thermal Annealing induced relaxation of compressive strain in porous GaN structures
Author:
Publisher
IEEE
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http://xplorestaging.ieee.org/ielx5/6337031/6358457/06359296.pdf?arnumber=6359296
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Optical properties of porous InP generated via metal-assisted chemical etching;2021 6th International Conference on Renewable Energy: Generation and Applications (ICREGA);2021-02-02
2. In(Ga)N Nanostructures and Devices Grown by Molecular Beam Epitaxy and Metal-Assisted Photochemical Etching;Nanomaterials;2021-01-07
3. Surface and optical characteristics of polycrystalline GaN layer with different pores profile of porous GaAs/GaAs substrate;Materials Research Express;2019-05-10
4. On the phenomenon of large photoluminescence red shift in GaN nanoparticles;Nanoscale Research Letters;2013-07-31
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