A high-power-density, high-speed gate driver for a 10 kV SiC MOSFET module-Reference-Cited by-同舟云学术

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A high-power-density, high-speed gate driver for a 10 kV SiC MOSFET module

Published:2017-08 Issue: Volume: Page:
ISSN:
Container-title:2017 IEEE Electric Ship Technologies Symposium (ESTS)
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Author:

DiMarino C.,Wang J.,Burgos R.,Boroyevich D.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8062839/8069243/08069347.pdf?arnumber=8069347

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study on OH radical oxidation of 4H-SiC in plasma based on ReaxFF molecular dynamics simulation;Journal of Molecular Liquids;2024-04

2. Desat Protection With Ultrafast Response for High-Voltage SiC MOSFETs With High dv/dt;IEEE Open Journal of Industry Applications;2024

3. Design of a simple and low-cost solid-state ultra-fast high-voltage switch;Review of Scientific Instruments;2023-06-01

4. Study On Oh Radical Oxidation of 4h-Sic Based on Reaxff Molecular Dynamics Simulation;2023

5. Review of the designs in low inductance SiC half‐bridge packaging;IET Power Electronics;2022-04-12

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