Abnormal On-Current Degradation Under Non-Conductive Stress in Contact Field Plate Lateral Double-Diffused Metal-Oxide- Semiconductor Transistor With 0.13-μm Bipolar-CMOS-DMOS Technology-Reference-Cited by-同舟云学术

Abnormal On-Current Degradation Under Non-Conductive Stress in Contact Field Plate Lateral Double-Diffused Metal-Oxide- Semiconductor Transistor With 0.13-μm Bipolar-CMOS-DMOS Technology

Published:2022-05 Issue:5 Volume:43 Page:769-772
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Hung Wei-Chun¹^ORCID,Tu Yu-Fa²^ORCID,Chang Ting-Chang¹^ORCID,Tai Mao-Chou³^ORCID,Tan Yung-Fang⁴,Chen Kuan-Hsu¹,Yeh Chien-Hung³,Tu Hong-Yi⁴,Kuo Hung-Ming¹

Affiliation:

1. Department of Physics, National Sun Yat-sen University, Kaohsiung, Taiwan

2. Institute of Electronics Engineering, National Tsing Hua University, Hsinchu, Taiwan

3. Department of Photonics, National Sun Yat-sen University, Kaohsiung, Taiwan

4. Department of Materials and Optoelectronic Science, National Sun Yat-sen University, Kaohsiung, Taiwan

Funder

National Sun Yat-sen University Joint Center for High Value Instruments

Ministry of Science and Technology in Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9762988/09749179.pdf?arnumber=9749179

Reference21 articles.

1. A novel contact field plate application in drain-extended-MOSFET transistors

2. On-Resistance Degradation Induced by Hot-Carrier Injection in LDMOS Transistors With STI in the Drift Region

3. Hot-Carrier Degradation in Power LDMOS: Drain Bias Dependence and Lifetime Evaluation

4. Hot-Carrier Degradation Phenomena in Lateral and Vertical DMOS Transistors

5. Physics-Based Analytical Model for HCS Degradation in STI-LDMOS Transistors

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3. Abnormal Two-Stage Degradation Under Hot Carrier Injection With Lateral Double-Diffused MOS With 0.13-μm Bipolar-CMOS-DMOS Technology;IEEE Transactions on Electron Devices;2023-07

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