Damage-Induced Ferroelectricity in HfOx-Based Thin Film
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Seoul National University, Seoul, South Korea
2. Department of Electronic Engineering, Inha University, Incheon, South Korea
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/9762988/09743944.pdf?arnumber=9743944
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5. Thin-oxide damage from gate charging during plasma processing
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