Curing of 1-Transistor-DRAM by Joule Heat From Punch-Through Current
Author:
Affiliation:
1. School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea
Funder
National Research Foundation (NRF) of Korea
IC Design Education Center (EDA Tool and MPW), Republic of Korea
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/9721042/09695478.pdf?arnumber=9695478
Reference18 articles.
1. Single-transistor latch in SOI MOSFETs
2. Hot hole induced damage in 1T-FBRAM on bulk FinFET
3. A Comprehensive Study of a Single-Transistor Latch in Vertical Pillar-Type FETs With Asymmetric Source and Drain
4. Thermally induced interface degradation in (111) Si/SiO2traced by electron spin resonance
5. Observation of Normally Distributed Energies for Interface Trap Recovery After Hot-Carrier Degradation
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