Impact of Charge Balance on Static and Dynamic Characteristics of GaN Super-Heterojunction Schottky Barrier Diodes
Author:
Affiliation:
1. Department of Electrical Engineering, Pennsylvania State University, University Park, PA, USA
2. College of Nanoscale Science and Engineering, State University of New York Polytechnic Institute, Albany, NY, USA
Funder
Office of Naval Research
U.S. Department of Energy Advanced Research Projects Agency–Energy
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
https://ieeexplore.ieee.org/ielam/55/9762988/9744108-aam.pdf
Reference19 articles.
1. kV-Class GaN-on-Si HEMTs Enabling 99% Efficiency Converter at 800 V and 100 kHz
2. Design of GaN/AlGaN/GaN Super-Heterojunction Schottky Diode
3. 12.5 kV GaN Super-Heterojunction Schottky Barrier Diodes
4. Experimental Demonstration of Charge- Balanced GaN Super-Heterojunction Schottky Barrier Diode Capable of 2.8 kV Switching
5. 3.4-kV AlGaN/GaN Schottky Barrier Diode on Silicon Substrate With Engineered Anode Structure
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