On the Effect of SiC Power MOSFET Gate Oxide Degradation in High Frequency Phase Leg-Based Applications-Reference-Cited by-同舟云学术

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On the Effect of SiC Power MOSFET Gate Oxide Degradation in High Frequency Phase Leg-Based Applications

Published:2022-10-09 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE Energy Conversion Congress and Exposition (ECCE)
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Author:

Naghibi Javad¹,Mohsenzade Sadegh²,Iqbal Saqib¹,Mehran Kamyar¹,Foster Martin P.³

Affiliation:

1. School of Electronics Engineering and Computer Science, Queen Mary University of London,London,UK

2. K. N. Toosi University of Technology,Electrical Engineering Department,Tehran,Iran

3. The University of Sheffield,Department of Electronic and Electrical Engineering,Sheffield,UK

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9947299/9947300/09947441.pdf?arnumber=9947441

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Evaluation of Turning on/off Delay Time Interval as a Precursor for IGBTs Gate Oxide Degradation;2023 14th Power Electronics, Drive Systems, and Technologies Conference (PEDSTC);2023-01-31

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