Interface Engineering for Steep Slope Cryogenic MOSFETs-Reference-Cited by-同舟云学术

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Interface Engineering for Steep Slope Cryogenic MOSFETs

Published:2022-12 Issue:12 Volume:43 Page:2149-2152
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Richstein B.¹^ORCID,Han Y.²^ORCID,Zhao Q.²^ORCID,Hellmich L.¹^ORCID,Klos J.³,Scholz S.¹,Schreiber L. R.³^ORCID,Knoch J.¹^ORCID

Affiliation:

1. Institute of Semiconductor Electronics, RWTH Aachen University, Aachen, Germany

2. Peter Grünberg Institute (PGI 9), Jülich, Germany

3. JARA-FIT Institute for Quantum Information, Forschungszentrum Jülich GmbH and RWTH Aachen University, Aachen, Germany

Funder

Deutsche Forschungsgemeinschaft

Germany’s Excellence Matter and Light for Quantum Computing

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9965979/09930783.pdf?arnumber=9930783

Reference15 articles.

1. Theoretical Limit of Low Temperature Subthreshold Swing in Field-Effect Transistors

2. On the modelling of temperature dependence of subthreshold swing in MOSFETs down to cryogenic temperature

3. Subthreshold behavior of silicon MOSFETs at 4.2 K

4. Silicon Nitride Interface Engineering for Fermi Level Depinning and Realization of Dopant-Free MOSFETs

5. Miniaturized pH‐Sensitive Field‐Effect Capacitors with Ultrathin Ta ₂ O ₅ Films Prepared by Atomic Layer Deposition

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ultrasteep Slope Cryogenic FETs Based on Bilayer Graphene;Nano Letters;2024-09-04

2. Device Modeling for Admittance Spectroscopy of PMOSFETs at Cryogenic Temperatures;IEEE Transactions on Electron Devices;2024-04

3. Modeling of the Subthreshold Swing in Cryogenic MOSFET With the Combination of Gaussian Band Tail and Gaussian Interface State;IEEE Transactions on Electron Devices;2024-02

4. On the Performance of Low Power Cryogenic Electronics for Scalable Quantum Information Processors^*;2023 IEEE Nanotechnology Materials and Devices Conference (NMDC);2023-10-22

5. Improved performance of FDSOI FETs at cryogenic temperatures by optimizing ion implantation into silicide;Solid-State Electronics;2023-10

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