Temporal Correlation Detection Based on 3D NAND Flash In-Memory Computing
Author:
Affiliation:
1. Chinese Academy of Sciences, Institute of Microelectronics, Beijing, China
2. Yangtze Memory Technologies Company, Ltd., Wuhan, China
Funder
National Key Research and Development Program of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/9780621/09763545.pdf?arnumber=9763545
Reference12 articles.
1. A 3D NAND Flash Ready 8-Bit Convolutional Neural Network Core Demonstrated in a Standard Logic Process
2. Technological Design of 3D NAND-Based Compute-in-Memory Architecture for GB-Scale Deep Neural Network
3. Semi-Analytical Model for the Transient Operation of Gate-All-Around Charge-Trap Memories
4. High-Density and Highly-Reliable Binary Neural Networks Using NAND Flash Memory Cells as Synaptic Devices
5. Charge-trap transistors for neuromorphic computing;gu,2018
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1. Simultaneous Spike Processing for 3D NAND-Based Spiking Neural Networks;IEEE Electron Device Letters;2024-03
2. Design of an efficient VARMAx model to leverage in-memory computing for faster big data analytics;AIP Conference Proceedings;2024
3. Winner-Takes-All Neural Network Based on 3D NAND Flash With 1-Bit Erase Scheme;IEEE Electron Device Letters;2023-05
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