Linearity Enhancement of AlGaN/GaN HEMTs With Selective-Area Charge Implantation
Author:
Affiliation:
1. State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, China
Funder
National Key Research and Development Program of China
National Natural Science Foundation of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/9927475/09895433.pdf?arnumber=9895433
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. High linearity AlGaN/GaN HEMTs with Au-free Ti/Al/Ni/Ti ohmic contacts for Ka-band applications;Applied Physics Express;2024-07-01
2. High Power Linearity and Low Leakage Current of AlN/GaN/InGaN Coupling Channel HEMTs With N₂O Oxidation Treatment;IEEE Electron Device Letters;2024-06
3. Enhanced Performance of GaN HEMTs in X‐band Applications Using SixN/Si3N4 Bilayer Passivation Technique;physica status solidi (a);2024-05-08
4. Fermi-Level Pinning Effect in Gate Region: A Case Study of Multimetal Gated AlGaN/GaN HEMT for High RF Linearity;2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2024-03-03
5. Linearity Characterization of Enhancement- Mode p-GaN Gate Radio-Frequency HEMT;IEEE Electron Device Letters;2023-11
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