Unveiling Resistance Switching Mechanisms in Undoped HfO<sub>x</sub> Ferroelectric Tunnel Junction Using Low-Frequency Noise Spectroscopy-Reference-Cited by-同舟云学术

Unveiling Resistance Switching Mechanisms in Undoped HfO_x Ferroelectric Tunnel Junction Using Low-Frequency Noise Spectroscopy

Published:2023-02 Issue:2 Volume:44 Page:345-348
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Shin Wonjun¹^ORCID,Koo Ryun-Han¹,Min Kyung Kyu¹^ORCID,Kwon Dongseok¹^ORCID,Kim Jae-Joon¹^ORCID,Kwon Daewoong²^ORCID,Lee Jong-Ho¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering and the Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul, South Korea

2. Department of Electrical Engineering, Inha University, Incheon, South Korea

Funder

Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education

Brain Korea 21 Plus Project

National research Facilities and Equipment Center grant funded by the Ministry of Education

Institute of Information & communications Technology Planning & Evaluation (IITP) grant funded by the Korea government

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/10027614/09998513.pdf?arnumber=9998513

Reference25 articles.

1. Interplay between ferroelectric and resistive switching in doped crystalline HfO2

2. Atomic layer etching of ferroelectric hafnium zirconium oxide thin films enables giant tunneling electroresistance

3. Effects of High-Pressure Annealing on the Low-Frequency Noise Characteristics in Ferroelectric FET

4. Comprehensive and accurate analysis of the working principle in ferroelectric tunnel junctions using low-frequency noise spectroscopy

5. An Overview of Current Trends in Hafnium Oxide–Based Resistive Memory Devices

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