Effect of Silicon Doping in B–Te (B<sub>4</sub>Te₆) Binary Ovonic Threshold Switch System-Reference-Cited by-同舟云学术

Effect of Silicon Doping in B–Te (B₄Te₆) Binary Ovonic Threshold Switch System

Published:2022-04 Issue:4 Volume:43 Page:643-646
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Ban Sanghyun¹^ORCID,Lee Sangmin¹^ORCID,Lee Jangseop¹^ORCID,Hwang Hyunsang¹^ORCID

Affiliation:

1. Department of Material Science and Engineering, Center for Single Atom-based Semiconductor Device, Pohang University of Science and Technology (POSTECH), Pohang, South Korea

Funder

National Research Foundation of Korea

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9741089/09715128.pdf?arnumber=9715128

Reference28 articles.

1. 3D Stackable and Scalable Binary Ovonic Threshold Switch Devices with Excellent Thermal Stability and Low Leakage Current for High‐Density Cross‐Point Memory Applications

2. Improved Electrical Performance Thanks to Sb and N Doping in Se-Rich GeSe-Based OTS Selector Devices

3. Toward ultimate nonvolatile resistive memories: The mechanism behind ovonic threshold switching revealed;noé;Sci Adv,2020

4. Te-based chalcogenide materials for selector applications

5. Comprehensive Handbook of Chemical Bond Energies

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