Optimization of process parameter variation in 45nm p-channel MOSFET using L<inf>18</inf> orthogonal array-Reference-Cited by-同舟云学术

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Optimization of process parameter variation in 45nm p-channel MOSFET using L18 orthogonal array

Published:2012-09 Issue: Volume: Page:
ISSN:
Container-title:2012 10th IEEE International Conference on Semiconductor Electronics (ICSE)
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Author:

Salehuddin F.,Ahmad I.,Hamid F. A.,Zaharim A.,Hamid Afifah Maheran A.,Menon P. Susthitha,Elgomati H. A.,Majlis B. Yeop,Apte P. R.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6410086/6417062/06417127.pdf?arnumber=6417127

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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3. HealthLog Monitor: Errors, Symptoms and Reactions Consolidated;IEEE Transactions on Device and Materials Reliability;2019-03

4. Optimization of 10nm Bi-GFET Device for higher ION/IOFF ratio using Taguchi Method;Journal of Physics: Conference Series;2018-11

5. Harnessing voltage margins for energy efficiency in multicore CPUs;Proceedings of the 50th Annual IEEE/ACM International Symposium on Microarchitecture;2017-10-14

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