A Double-Sided Cooling 650V/30A GaN Power Module with Low Parasitic Inductance-Reference-Cited by-同舟云学术

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A Double-Sided Cooling 650V/30A GaN Power Module with Low Parasitic Inductance

Published:2020-03 Issue: Volume: Page:
ISSN:
Container-title:2020 IEEE Applied Power Electronics Conference and Exposition (APEC)
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Author:

Wang Kangping,Li Bingyang,Zhu Hongkeng,Yu Zheyuan,Wang Laili,Yang Xu

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9121924/9123991/09124425.pdf?arnumber=9124425

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design and Transient Analysis of a 650 V/150 A GaN Power Modules With Integrated Bias Power and Gate-Drive Circuit;IEEE Transactions on Components, Packaging and Manufacturing Technology;2024-03

2. Structural, optical, and electrical characterization and performance comparison of AlGaN/GaN HEMT structures with different buffer layers;Vacuum;2024-01

3. Overview of Wide/Ultrawide Bandgap Power Semiconductor Devices for Distributed Energy Resources;IEEE Journal of Emerging and Selected Topics in Power Electronics;2023-08

4. Review of Double-Sided Cooling Power Modules for Driving Electric Vehicles;IEEE Transactions on Device and Materials Reliability;2023-06

5. Application-Oriented Characterization of Thermally Optimized, Asymmetrical Single Chip Packages for 100 V GaN HEMTs;2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2023-05-28

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