Toward high-performance and reliable Ge channel devices for 2 nm node and beyond
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Publisher
IEEE
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http://xplorestaging.ieee.org/ielx7/9371868/9371888/09372007.pdf?arnumber=9372007
Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A novel approach to Si0.5Ge0.5 channel FinFET fabrication: utilizing a three-layer SiGe strain relaxation buffer and In-Situ phosphorus doping;Journal of Materials Science: Materials in Electronics;2024-02
2. High-κ Gate Dielectric on Tunable Tensile Strained Germanium Heterogeneously Integrated on Silicon: Role of Strain, Process, and Interface States;ACS Applied Electronic Materials;2023-08-17
3. Enhanced Electrical Performance of Ge nMOSFET with Rapid Remote Plasma Oxidation Treatment;2023 Silicon Nanoelectronics Workshop (SNW);2023-06-11
4. High Performance Ge FinFET CMOS Invertor with $\mathrm{I}_{\text{ON}}=2.0\ \text{mA}/\mu\mathrm{m}$ at $\mathrm{V}_{\text{OV}}=1\mathrm{V}, \mathrm{S}.\mathrm{S}.=64\ \text{mV}/\text{dec},\mathrm{I}_{\text{ON}}/\mathrm{I}_{\text{OFF}}=2.5\times 10^{6}$, and $\text{Voltage}\ \text{Gain}=90\ \mathrm{V}/\mathrm{V}$ by Using High Pressure Supercritical Fluid Hydroxide Oxidation;2023 Silicon Nanoelectronics Workshop (SNW);2023-06-11
5. 3-D Self-Aligned Stacked Ge Nanowire pGAAFET on Si nFinFET of Single Gate CFET;IEEE Journal of the Electron Devices Society;2023
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