A 33-GHz LNA for 5G Wireless Systems in 28-nm Bulk CMOS
Author:
Funder
Science Foundation Ireland
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/8920/8470998/08418759.pdf?arnumber=8418759
Cited by 66 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. A 26–28 GHz, Two-Stage, Low-Noise Amplifier for Fifth-Generation Radio Frequency and Millimeter-Wave Applications;Sensors;2024-03-31
2. 3.8-mW 26–29-GHz CMOS LNA With 21.6-dB Gain and 2.49-dB NFavg Using Dual Self-Bias and Gain Boosting;IEEE Microwave and Wireless Technology Letters;2024-01
3. A 76–82 GHz VCO in 65 nm CMOS With 189.3 dBc/Hz PN FOM and −0.6 dBm Harmonic Power for mm-Wave FMCW Applications;IEEE Transactions on Circuits and Systems I: Regular Papers;2024-01
4. Low Power and High Linear, Low Noise Amplifier Designed in 22nm FDSOI Technology for 5G Wireless Systems;2023 Asia-Pacific Microwave Conference (APMC);2023-12-05
5. Design of a 39-GHz compact bi-directional variable gain amplifier in 65-nm CMOS;Microelectronics Journal;2023-12
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